Richardson RFPD Inc. announced the availability and full design support capabilities for a new power amplifier from Microsemi Corp., a Microchip Company.

The MMA053AA is a GaAs MMIC PHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3 and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from an 11 V supply.

Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar and test equipment applications.

The MMA053AA amplifier features compact die size (3 mm x 2.25 mm x 0.07 mm) and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCM).

The MMA053AA’s leading performance capabilities offer customers a way to meet demanding system and module line-up requirements with minimal DC power consumption.