EpiGaN, headquartered in Hasselt, Belgium, has selected Aixtron’s G5+C MOCVD system to boost its manufacturing capability of large diameter GaN on Si and GaN on SiC epiwafers.

The new Aixtron AIX G5+C reactor will be installed at EpiGaN’s manufacturing site in Hasselt and operational in Q1 of 2019. The fully automated Planetary^© MOCVD system features in-situ chamber cleaning and enables configurations of 8 in. x 6 in. or 5 in. x 8 in. epitaxial wafers to be automatically loaded and removed from the system in an enclosed cassette environment.

EpiGaN recently released large diameter versions of its high voltage RF (HVRF) GaN on Si and GaN on SiC wafer product families, tailored to demanding 5G applications. With the new Aixtron AIX G5+ MOCVD system, EpiGaN expects to quickly scale up capacity to supply its differentiating technology to the global market.

"The demand from our global customer base for GaN product solutions is booming. Our key customers are getting ready to launch and scale-up products based on our GaN RF power technology, which is optimized for 5G broadband network applications. With Aixtron’s AIX G5+C planetary system, EpiGaN will increase its capacity for 150 and 200 mm product solutions to cope with these increasing market demands. Aixtron’s planetary system combines excellent on-wafer uniformity and run-to-run performance at the lowest cost of ownership — these attributes are critical to serve our customer base with products of exceptional performance and at the right price point.“ — Marianne Germain, EpiGaN co-founder and CEO

Dr. Felix Grawert, president of AIXTRON, said, “We are confident the AIX G5+C will support EpiGaN’s demanding requirements for high quality, cost-effective production of GaN epitaxial wafers, as our tool meets the highest standards in terms of uniformity and particle density.”