Integra Technologies (www.integratech.com) a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, has released a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems.

IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long Term Duty Cycle) or standard Mode S (128μs, 2% Duty Cycle) pulse conditions.

It supplies a minimum of 2200W of peak output power, with typically >16 dB of gain and 57% efficiency and operates from a 50V supply voltage.

This RF power amplifier module/pallet is matched to 50-ohms at both input and output and is suitable for both 1030 and 1090 MHz.

For package dimensions, evaluation board detail s, and complete test specifications, download the data sheet for IGNP1011L2400 at www.integratech.com/ignp1011l2400/.

For application assistance, contact the Integra Technical Support team online at https://www.integratech.com/support-for-high-power-rf-amplifier-design/.