WIN Semiconductors has expanded its GaN process capabilities with a 0.45 µm gate technology that supports 5G applications. Ideal for sub-6 GHz 5G applications, the NP45-11 technology supports power applications from 100 MHz through 6 GHz.

The NP45-11 GaN on SiC process allows customers to design hybrid Doherty power amplifiers for 5G applications, including massive MIMO wireless antenna systems. Similar to macrocell applications, MIMO base stations often combine Doherty power amplifiers with linearization techniques to meet the demanding linearity and efficiency specifications of today's wireless infrastructure.

GaN devices outperform the incumbent LDMOS technology, offering superior efficiency, instantaneous bandwidth and linearity, particularly in the higher frequency bands slated for 5G radio access networks.

This discrete transistor process is environmentally rugged, incorporating advanced moisture protection, and meets the JEDEC JESD22-A110 biased HAST qualification at 55 V. Combined with WIN Semiconductors’ environmentally rugged high voltage passive technology, IP3M-01, the NP45-11 technology enables hybrid power amplifiers to be assembled in low cost plastic packages.

The NP45-11 technology is fabricated on 100 mm SiC substrates and operates at a drain bias of 50 V. In the 2.7 GHz band, this technology provides saturated output power of 7 W/mm, more than 65 percent power-added efficiency without harmonic tuning and 18 dB linear gain.

NP45-11 sample kits are available and can be obtained by contacting WIN’s regional sales managers.

"5G radio access networks create several challenges to power amplifier designs used in MIMO systems. High output power and linear efficiency are primary design objectives to meet performance specifications and lower total cost of ownership. The tradeoff between output power and linearized efficiency is significant because of the high peak-to-average power ratio employed in today’s wireless modulation schemes. This tradeoff becomes more difficult in 5G applications due to greater instantaneous bandwidth requirements and higher operating frequency," — David Danzilio, senior vice president of WIN Semiconductors

WIN Semiconductors at IMS2018

David Danzilio will be presenting a paper at the 5G Power Amplifier Technology Workshop on Monday, June 11.

WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mmWave solutions in Booth #415 at IMS2018 in Philadelphia, June 10–15.