Sumitomo Electric Device Innovations USA (SEDU) will feature its latest GaN HEMT offerings at the 2018 International Microwave Symposium (IMS2018) in Philadelphia, including S- and X-Band GaN power transistors for radar applications at 3.1 to 3.5 and 9 to 10 GHz.

GaN is a proven and reliable semiconductor material used for today's radar systems, which are providing larger detection areas and advanced early detection, while reducing size and weight. Offering high output power and wide bandwidth, GaN helps to improve radar performance.

Sumitomo Electric will showcase two new GaN-HEMTs, SGN3135-500H-R and SGC0910-300A-R, at IMS.

Features of the S-Band SGN3135-500H-R

• Frequency band: 3.1 to 3.5 GHz.
• High output power: P_sat = 570 W typical.
• High power-added efficiency: 58 percent typical.
• High gain: G_P = 11.6 dB typical.
• Impedance matched Zin and Zout = 50 Ω.
• Hermetically-sealed package.

Features of the X-Band SGC0910-300A-R

• Frequency band: 9.0 to 10.0 GHz
• High output power: P_sat = 340 W typical.
• High power-added efficiency: 35 percent typical.
• High gain: G_P = 9.3 dB typical.
• Impedance matched Zin and Zout = 50 Ω.
• Hermetically-sealed package

SGN3135-500H-R and SGC0910-300A-R were designed using Sumitomo Electric’s established GaN process technology. Sumitomo Electric remains a leader in producing GaN-related products and continues to innovate in low-cost, high-performance devices for next-generation radar systems.

Visit SEDU at Booth #1141 at IMS 2018 to learn more.