Richardson RFPD, Inc. announced the availability and full design support capabilities for a new 65 V, wideband RF power LDMOS transistor from NXP Semiconductors.
The MRFX1K80H is the first product in NXP's new MRFX series. It is designed to deliver 1800 W CW at 65 V for applications from 1.8 to 400 MHz and is capable of handling 65:1 VSWR.
Available in an air cavity ceramic package, it is a high-ruggedness transistor designed for use in high-VSWR ISM applications, as well as radio and VHF TV broadcast, sub-GHz aerospace, and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz. Additional key features of the MRFX1K80H include:
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 65 VDD operation
- Characterized from 30 to 65 V for extended power range
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch