Qorvo® announced a new family of three 50 V GaN-on-SiC transistors that improve performance, increase functionality and accelerate development of mission-critical tactical and public safety radios. The transistors are input-matched for wideband applications and feature a compact footprint, enabling smaller, next-generation communications devices.

According to the company, Qorvo is "the only supplier of 50 V wideband-matched GaN-on-SiC transistors." Higher voltage transistors deliver benefits including increased output power, reduced current loss and greater reliability. Higher voltage devices require fewer transistors in system designs. Additionally, wideband matching increases energy efficiency and allows board designs to be optimized for specialized military and first responder devices. Qorvo’s newest transistors are designed for space-constrained, mission-critical applications ranging from military and land-mobile radio communications to avionics and test instruments.

James Klein, president of Qorvo's infrastructure and defense products business, said, “Military personnel and first responders must communicate across many channels and have reliable access to wideband capabilities such as data, video and GPS–all in very challenging conditions. The higher voltage of our new transistors at three different power levels ultimately translates into more powerful, more capable and more reliable radios.”

Qorvo offers a variety of high-power and high frequency RF transistors, including GaAs PHEMTs and GaN HEMTs, in both die and packaged form. Qorvo’s portfolio of GaN products will be featured at the 2017 International Microwave Symposium (IMS2017) in Honolulu, June 4-9, in Booth #1510.

To learn more about Qorvo’s high-performance solutions, visit: http://www.qorvo.com/gan.