Ampleon announced the Gen10 series of LDMOS RF power transistors that deliver a record efficiency of 52 percent and 18 dB of gain (at 1.8 GHz) in wireless infrastructure power amplifiers (PA). Specifically designed to meet the demands of the cellular industry for more power efficient base station designs, the Gen10 family reduces power consumption, shrinks the size and weight of the power amplifier and lowers the operating temperature of infrastructure equipment.

Thanks to an innovative implementation of internal decoupling, the transistors enable wide band operation, where a single PA can cover a complete LTE band simultaneously.

Fred van Rijs, senior director LDMOS program, Ampleon comments, “This is a breakthrough showing that major performance increases are still possible with LDMOS. These improvements of around 2 dB of gain and five points of efficiency, significantly contribute to a greener planet by lowering the power consumption of wireless base stations.”

The Gen10 series of RF power transistors include:

• BLC10G18XS-320AVT, 1805 to1880 MHz, > 47.5 dBm average, > 51.5 percent efficiency
• BLC10G20LS-240PWT, 1805 to1880 MHz, 47.5 dBm average, > 52 percent efficiency (in a 3-way PA)
• BLC10G22LS-100AWT, 2110 to 2200 MHz, 42 dBm average, > 49.3 percent efficiency
• BLC10G22XS-400AVT, 2110 to 2200 MHz, > 49.4 dBm, > 48.6 percent efficiency
• BLC10G27XS-320AVT, 2500 to 2700 MHz, > 47.1 dBm, > 47.5 percent efficiency

Gen10 devices are assembled using Ampleon’s innovative and most cost effective ACP3 packaging.

Product demonstration: The Gen10 family of devices will be showcased on Ampleon’s Booth #914 at International Microwave Symposium (IMS) 2017, June 6 - 8, in Honolulu, Hawaii.