NI AWR Design Environment will be featured in the third annual NI-sponsored RF/Microwave Power Amplifier Forum being held during European Microwave Week (EuMW 2016), October 4-6 in London. Entitled Device Technologies, Characterization, Modeling and End-Use Applications, the forum takes place on Wednesday, October 5 from 9:30 a.m. to 2:00 p.m. in Room 6, Conference Area Level 3.

The event provides insight and encourages discussion around the latest approaches to power amplifier (PA) device models, parameter extraction measurement techniques and process technologies, as well as design flow and theory. The keynote speaker is Dr. Steve C. Cripps of Cardiff University, who has recently published a second edition of his best-selling book, RF Power Amplifier Design for Wireless Communications.

Related Resources

Narrowband Bandstop Filter: BSF-W-00193
National Instruments

Forum Topics include:

  • Keynote: Clipping Harmonic Contours - A New RF PA Design Tool
  • Source Pull and Device Performance
  • Polyharmonic Distortion (EPHD) Transistor Models
  • Load Pull
  • High-Power, High-Frequency Applications
  • Amplifier Design and Advanced Synthesis

The forum is free to attend for those with a valid EuMW exhibition or conference badge. Seats are limited so advance registration is recommended. For details and to register, visit awrcorp.com/eumw2016/rf-and-microwave-pa-forum. 

Learn more at ni.com/awr.