M/A-COM Technology Solutions Inc., a leading supplier of high performance analog RF, microwave and optical semiconductor products, announced the new NPT2024, a wideband transistor optimized for DC to 2.7 GHz operation using MACOM’s proprietary gallium nitride on silicon (GaN on Si) process is sampling today. The NPT2024 supports CW, pulsed and linear operation, boasting output levels up to 200 W.

Providing customers with 50 V operation, 16 dB of gain and 60% drain efficiency at 1500 MHz, this 100% RF tested HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2024 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and UHF/L-band radar.

“The technical performance of MACOM’s NPT2024 complements our expanding GaN portfolio, which offers the industry with a broad GaN offering boasting high performance, gain, efficiency and affordability,” said Gary Lopes, senior product director, MACOM.

Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10 percentage points greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.

To learn more about the NPT2024 visit MACOM’s booth #235 at EuMW 2015, September 8 – 10, 2015 in Paris, France. Samples of the NPT2024 are available from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com