Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

 

"Qorvo is expanding GaN in low cost QFN plastic packaging to include X-band transistors for marine and avionics radar," said Roger Hall, Qorvo's general manager of Aerospace and Defense Products. "Radar manufacturers that are converting Magnetrons to solid state power amplifiers (SSPAs) and radar arrays can produce smaller, more efficient radar units as a result of GaN's size, weight and power efficiencies. They are also assured that Qorvo's best-in-class GaN solutions have met stringent heat and moisture stress testing so that the products will operate in harsh environments."

 

The TGF2977-SM, TGF2978-SM, and TGF2979-SM are unmatched GaN transistors designed to operate in the 8-12GHz frequency band. Qorvo's industry leading GaN technology paired up with the small packaging enables high linear gain and power efficiency. Qorvo's X-band power transistors will be available in fourth the quarter of calendar 2015.

 

Part Number Frequency Range (GHz) Output Power (P3dB) Drain Efficiency (%) Linear Gain (dB) Packaging (mm)

TGF2977-SM 8 - 12 37 dBm 50 12.5 3x3 QFN

TGF2978-SM 8 - 12 43 dBm 45 11 3x3 QFN

TGF2979-SM 8 - 12 44 dBm 45 11 3x4 QFN

 

Qorvo will showcase its portfolio of plastic-packaged GaN solutions at stand C307 at European Microwave Week, September 6-11 at the Palais Des Congrès in Paris, France.

 

For the industry's leading core RF solutions, visit www.qorvo.com.