Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced a new highly cost effective, high performance Ka-band 3 watt GaN power amplifier for commercial VSAT satellite ground terminals transmitting high speed internet data.

"Qorvo's 0.15um high-frequency GaN process delivers three times the power density of past generation GaAs pHEMT solutions. With unmatched, power, device gain and reliability, the technology is ideal for both saturated and linear high power amplifier for Ka-band satellite ground terminal transmit applications," said Gorden Cook, general manager of Qorvo's transport business unit. "Supporting both saturated and linear applications, the TGA2636-SM delivers 3 watts of peak output power for traditional saturated power VSAT ground terminal applications, and when operated in a 'linear power back-off mode' required for higher–order modulation systems, enables more effective use of the Ka-band spectrum, resulting in higher data rates delivered to the user."

The TGA2636-SM GaN PA is fabricated utilizing Qorvo's 0.15-micron gallium nitride on silicon carbide (GaN on SiC) process, and operates across a 28 – 31 GHz frequency range while delivering 3 watts of saturated output power and 25dB linear gain at 30% power-added efficiency (PAE) in a compact 5x5mm surface mount package.

Qorvo's new GaN VSAT power amplifier will begin sampling in the current quarter 2015, with production quantities available in the first quarter of calendar 2016.

Qorvo is showcasing its GaN power amplifiers at stand C307 at European Microwave Week, September 8-10 at the Palais de Congrès in Paris, France.

For the industry's leading core RF solutions, visit www.qorvo.com.