Cree Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is introducing two industry-leading new products and contributing to a series of workshop presentations about current trends in GaN packaging at the 2015 International Microwave Symposium (IMS). Recognized as the industry’s premier annual international conference for technologists involved in all aspects of microwave theory and practice, IMS 2015 will take place May 17–21 in Phoenix, Ariz.

Exhibiting at Booth #2636, Cree will demonstrate a new 30W, 13 GHz GaN MMIC HPA (CMPA1D1E030D) and its packaged counterpart (CMPA1D1E025F), a 50W GaN HEMT for microwave and RF applications up to 4GHz (CGHV40050), and a 25W GaN MMIC in both bare die and packaged formats for 6 to 12 GHz performance in radar, jamming, test equipment, and broadband amplifiers (CMPA601C025D and CMPA601C025F). Cree will also introduce two new, industry-leading products for C- and S-Band applications.

Additionally, on Sunday, May 17, Simon Wood, product development manager, Cree RF will contribute to workshop session WSM – Current Trends in GaN Packaging, by delivering a presentation about the recent advances in plastic. In “Advances in GaN Packaging for Low Cost Applications,” the fourth of five WSM presentations that will span 1:00 – 5:00pm, Simon will share results of Cree’s low cost ceramic and over-mold plastic packaging development at the component level. Specifically, he will discuss the importance of maintaining superior RF GaN performance in low-cost packaged devices, address the need for exceptional thermal management, and offer a prediction about the future of low cost RF packaging.

“As a leader in GaN HEMT and MMIC technology designed for use in a wide variety of microwave and RF applications, Cree has exhibited at and contributed to IMS for the past 15 years,” said Tom Dekker, director of sales and marketing, Cree RF. “IMS provides us with a great opportunity to engage with our customers, participate in educational workshops, announce new products, and demonstrate the unique benefits of our GaN HEMT products, so we’re very much looking forward to IMS 2015.” 

For more information about the recently announced products that Cree will be demonstrating at IMS, please visit the embedded product number links above to access corresponding product datasheets. For more information about Cree’s IMS workshop presentation, please visit http://www.ims2015.org/technical-program/254-sunday-workshop-descriptions to access a complete list of Sunday workshops. IMS attendees can also acquire more information about advances in low cost plastic packaging for GaN devices and the products Cree will be demonstrating at the show, including the two new, industry-leading C- and S-Band products that they will announce at the event, by visiting Cree at Booth #2636.

For all other inquiries about Cree RF products and foundry services, please visit www.cree.com/RF or contact Sarah Miller, Marketing, Cree RF Components, at sarah_miller@cree.com or 919-407-5302.