RFMW Ltd. announces design and sales support for NXP’s BLF25M612G LDMOS power transistor offering 12 W average CW output power. The BLF25M612G is designed as a driver amplifier for high power CW applications in the 2400 to 2500 MHz ISM band. Operating from a 28 V supply, efficiency of the BLF25M612G is rated at 58%.

Offering a very high gain of 18 dB, this transistor touts excellent ruggedness and thermal stability. NXP provides a range of high power transistors for the industrial heating market with devices up to 250 W. LDMOS amplifiers offer higher reliability for industrial drying applications requiring minimal down time. These devices offer greater flexibility with regards to efficient heating when compared to magnetrons.