Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, is enhancing its support of the European market by extending its partnership with APC Novacom. APC Novacom now stocks all Cree^® RF devices that do not require an EU license, including GaN HEMT die, and actively supports Cree’s European market through both volume distribution and small volume stock for network representatives.

Ideally suited for a wide range of RF communications applications – broadband amplifiers, milcom, radar, satcom, point-to-point radio, telecoms, data links, and tactical data links – Cree GaN HEMT devices are claimed to exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. Cree GaN HEMTs are also claimed to offer greater power density and wider bandwidths than competing Si and GaAs technologies.

Cree RF products now available through APC Novacom include: general purpose broadband die, general purpose 28 V and 40 V broadband GaN high electron mobility transistors (HEMTs), 28 and 50 V telecom GaN HEMTs, 0.25 micron die and a variety of GaN HEMTs for satellite communications and L, S, X and C-Band applications.