Comtech PST proudly introduces a new high power density solid state RF module. Comtech’s latest development continues to expand on its proven innovative integrated RF GaN power amplifier designs by further increasing the RF power density. Consistent with its planned technology development roadmap, Comtech proudly introduces the latest in GaN-based 6-18 GHz RF amplifier. This highly integrated design is ideal for use in communication, electronic warfare, and radar transmitter systems where space, cooling, and power are limited.
Features:
- Ultra wideband operation
- High efficiency
- Full power across the entire bandwidth
- Rugged and reliable
- Low harmonic distortion
- Compact and lightweight
- GaN technology
Perfomance specifications:
- Frequency range: 6 to 18 GHz
- RF power output (P3dB): >50 Watts typical
- Gain @ 50 watts typical: >47 dB typical
- RF input overdrive: +10 dBm Max.
- Gain flatness @ 40 W (50 ?) ±4dB
- Class of operation: AB Linear
- Input VSWR/Output VSWR: 2.0:1 Maximum
- Output load VSWR: 2.0:1 Full Power
- Harmonics: 2 fo: <-15 dBc typical, 3 fo: <-25 dBc typical
- Spurious: <-60 dBc
- Stability: Open/Short tested
- Built in Test: Composite fault indication, over current fault, over temperature fault
- DC/control interface: 7-pin Combo D
- PA enable/disable: 5.0 V TTL <1us full RF ON/OFF
- DC input: +28 Vdc + 1 V
- DC power @ Standby: <15 W
- Efficiency (DC to RF): >14 % typical
- RF connectors: RF input - SMA female field replaceable, RF output - SMA female field replaceable
- Operating Temperature: -40 to +55°C Baseplate (external heatsink required)
- Environmental: shock/vibration MIL-STD-810F
- Size: 6.56” x 3.50” x 0.84”
- Weight: 1.5 lbs. max.
- Noise power output: -105 dBm/Hz