LDMOS FET MRF6V2010N
10-450 MHz, 10 Watts, 50V Lateral N-Channel Broadband RF Power MOSFETs
The MRF6V2010NR1 and MRF6V2010NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.