GREENSBORO, N.C., Jul 13, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the RF5365 WiFi front end module (FEM). The highly integrated RF5365 FEM satisfies the need for aggressive size reductions for typical 802.11b/g front-end designs and greatly reduces the number of components outside the core chipset.
RFMD's RF5365 FEM integrates a 802.11b/g power amplifier with a single pole three throw (SP3T) switch for 2.4 GHz to 2.5 Ghz ISM band applications. By integrating SP3T switch functionality, the RF5365 is able to route WLAN and Bluetooth(R) receive/transmit signals to two system-on-chip (SOC) transceivers, accommodating a common implementation in high-performance consumer electronics and handset/handheld WiFi applications. The SP3T switch can also act as a splitter to transmit or receive Bluetooth(R) and WLAN signals simultaneously.
The RF5365's 802.11 b/g power amplifier delivers 18dBm of linear output power for higher efficiency and lower EVM for 11n applications. Additionally, integrated 2170MHz filtering and harmonic attenuation reduce the need for a high loss/attenuation filter at the FEM output, increasing output power at the antenna.
An integrated Rx balun eliminates requirements for tuning components between the FEM and the SoC, and a direct-to-battery connection eliminates the need for additional DC circuitry. Finally, an integrated power detector increases immunity to power supply, temperature and VSWR fluctuations and improves the accuracy of the part's closed loop power control. The RF5365 is fully tested and packaged in a small 2.5 mm x 2.5 mm QFN package.
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