Cree

Cree Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is introducing two industry-leading new products and contributing to a series of workshop presentations about current trends in GaN packaging at the 2015 International Microwave Symposium (IMS).

Cree, Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has released the highest power Ku-Band MMIC available on the market.

 Cree has released two new unmatched 50 V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications.  

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

Cree Inc. announced that John Kurtzweil has resigned as executive vice president-finance and chief financial officer, effective May 21, 2012, to pursue other opportunities, and that Michael McDevitt has been appointed CFO on an interim basis. Cree has commissioned a search for a replacement through Russell Reynolds Associates, executive search consultants.