B. Come, R. Ness, S. Donnay, L. Van der Perre, W. Eberle, P. Wambacq, M. Engels, I. Bolsens

Articles by B. Come, R. Ness, S. Donnay, L. Van der Perre, W. Eberle, P. Wambacq, M. Engels, I. Bolsens

Impact of Front-end Non-idealities on Bit Error Rate Performance of WLAN-OFDM Transceivers

Results and evaluation of BER performance of a complete WLAN-OFDM transceiver

February 1, 2001

B. Come, R. Ness, S. Donnay, L. Van der Perre, W. Eberle, P. Wambacq, M. Engels, I. Bolsens

Technical Feature Impact of Front-end Non-idealities on Bit Error Rate Performance of WLAN-OFDM Transceivers This article describes origins of the use of high electron mobility field-effect transistors (HEMT) based on AlGaN/GaN technology as control components for high power microwave and RF control applications. B. Côme, R. Ness, S. Donnay,...