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Empower RF Systems, a global leader in power amplifier solutions that are critical to defense, commercial, and industrial market applications, will be exhibiting at AOC in Washington, D.C. (Oct 28 – 30).

Leading RF GaN device manufacturers including Cree, MACOM, NXP and Freescale will discuss their GaN solutions in workshops and technical presentations to an audience of RF/microwave design engineers and system integrators.

Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.

Richardson RFPD Inc. announces availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi Corp. (Microsemi).

Linear Technology Corp. announces the LT8614, a 4 A, 42 V input capable synchronous step-down switching regulator. A unique Silent Switcher™ architecture reduces EMI/EMC emissions by more than 20 dB, well below the CISPR 25 Class 5 limit. Even with switching frequencies in excess of 2 MHz, synchronous rectification delivers efficiency as high as 96% while Burst Mode® operation keeps quiescent current under 2.5 µA in no-load standby conditions.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released the first two members of its cost-effective TriAccess™ hybrid-packaged power doubler family. These CATV infrastructure devices are the first to utilize proprietary on-die linearization for best-in-class performance including excellent gain and low distortion. TriQuint is also announcing full production of two new GaN monolithic microwave integrated circuit (MMIC) power doublers for CATV infrastructure.

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, unveiled its first power doubler amplifier in a multi-chip module to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1.

Fujitsu Laboratories Ltd. announced the development of circuit technology that enables industry-leading electrical efficiency (the ratio between output power and consumed power) for wireless transmission power amplifiers used in radio-frequency wireless devices, such as mobile phone base stations.

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has commenced high-volume production of multiple new power amplifiers (PAs) and power management integrated circuits (ICs) that incorporate RFMD's envelope tracking (ET) technology.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.