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Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), announced availability of the industry’s highest-isolation SPDT RF switch for the wireless infrastructure market. The UltraCMOS® based PE42420 RF switch has high isolation of 64 dB @ 4 GHz — an approximately 20% increase over competing devices on the market.* Additionally, the switch features HaRP™ technology enhancements to deliver high linearity, with an IIP3 of 65 dBm.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
BeSpoon, a fabless semiconductor company, and CEA-Leti have demonstrated an IR-UWB integrated circuit able to measure distances within a few centimeters’ accuracy, and have established a world-record operating range at 880 m (standard regulation) and 3,641 m (emergency situations).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new evaluation kit for a 5W GaN MMIC power amplifier from Nitronex.
API Technologies Corp., a provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, has expanded its power amplifier line of products to include the latest in GaN technology driven designs. This expanded line is specially intended for use in electronic warfare, RCIED countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical.
Infineon has in development a complete family of packaged RF Transceiver for Mobile Backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio.
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Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
Infineon has in development a complete family of packaged RF Transceiver for Mobile Backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio.