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RF Micro Devices, Inc. and TriQuint Semiconductor, Inc. announced they have completed their merger of equals to form Qorvo™ (Nasdaq: QRVO), a new leader in RF solutions. Qorvo began trading on the NASDAQ global stock market January 2, 2015.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.

Richardson RFPD, Inc. announced the availability and full design support capabilities for a new RF single-pole four-throw switch from Peregrine Semiconductor Corp.

Analog Devices, Inc. announced an integrated direct conversion receiver development platform for radar systems where reduced size, weight and power (SWaP) implementation is critical. The new AD-FMCOMMS6-EBZ platform is a 400 MHz to 4.4 GHz receiver (1350 to 1650 MHz with installed filters) supporting the key L- and S-band frequency radar bands.

M/A-COM Technology Solutions Holdings, Inc. (MACOM), a leading supplier of high-performance RF, microwave, millimeterwave and photonic products, today announced that it has successfully completed its previously announced acquisition of BinOptics Corp., a leading merchant provider of Indium Phosphide lasers for data centers, mobile backhaul, silicon photonics and access networks, in an all-cash transaction valued at $230 million.

Murata Electronics North America, Inc., a wholly owned subsidiary of Murata Manufacturing Co., Ltd., and Peregrine Semiconductor Corp., founder of RF silicon on insulator (SOI) and pioneer of advanced RF solutions, announced that Murata has acquired all outstanding shares of Peregrine. The cash transaction paid the holders of Peregrine common shares $12.50 per share.

M/A-COM Technology Solutions Holdings Inc. ("MACOM"), a leading supplier of high performance RF, microwave, and millimeter wave products, announced two high power PIN diode switches with industry leading linearity in a common anode configuration, operating over 50 MHz to 1 GHz.

Modelithics, Inc., in partnership with TriQuint Semiconductor, has released the latest update to the growing library of high-accuracy non-linear simulation models for TriQuint gallium nitride (GaN) transistors.

 RFMW, Ltd. announces design and sales support for TriQuint's TGA2598-SM, a 33dBm Psat GaN driver amplifier. The TGA2598-SM offers 25dB small signal gain from two internal gain stages housed in a 4x4mm, air-cavity ceramic QFN package. 

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.