RFIC Channel - Semiconductor, MMIC & RFIC Articles, Product Launches, and more

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The productronica is an important trade fair for LPKF Laser & Electronics AG. In time for the opening, the specialist in micro-material processing presented new systems and procedures 

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.

Hittite Microwave Corp. announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6 to 18 GHz frequency range.

Giga-tronics has introduced the GT-1000B option 06 and the GT-1050B/GT-1051B olid-state ultra-wideband microwave power amplifiers which cover 100 MHz to 20 GHz and 10 MHz/2 GHz to 50 GHz respectively, with high output power, low noise figure and low harmonics in a single amplifier.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is introducing a new 6-20 GHz Low-Noise Amplifier to its growing product library, the CMD194C3. The new packaged broadband amplifier offers low noise figure and high gain while requiring a single-supply voltage.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new diffused metal oxide semiconductor (DMOS) transistor from STMicroelectronics (ST).

Centellax announced it will offer another level of integration to its highly successful linear modulator driver product line.

Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).

Peregrine Semiconductor Corp. announces the UltraCMOS 10 platform, the newest advancement in Peregrine’s UltraCMOS technology. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design.

Richardson RFPD Inc. announces availability and full design support capabilities for a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.