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Learn how Cree is a the leader in GaN-on-SiC technology and provides design engineers with a proven foundry process for producing highly-reliable GaN HEMT MMIC devices with a high rate of first-pass success and improved yields.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNA) from TriQuint.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the product release of the CMD201, a new DC to 20 GHz distributed MMIC power amplifier in die form.

MACOM announced an IP licensing program for Gallium Nitride (GaN) on silicon technology.  MACOM detailed recent progress in two areas critical to realizing its future vision of enabling the mainstream adoption of GaN as a large-scale RF semiconductor technology across the industry.

Linear Technology introduces the LT6020, a dual 3V to 30V fast settling operational amplifier, featuring 30µV maximum input offset voltage and 0.5µV/°C max VOS drift. While supply current is only 100µA maximum per amplifier, proprietary slew enhancement circuitry provides fast clean output step response. The LT6020 settles to 0.0015% in less than 15µs regardless of whether the output step is 5V or 25V. Specially designed input circuitry maintains high impedance, minimizing current spikes associated with fast steps for input steps up to 5V.

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.

Richardson RFPD Inc. announces a new 2500 to 6000 MHz, 100 W solid state high power amplifier from Empower RF Systems Inc. (Empower).

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory (AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.

Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of satellite, RF equipment and microwave systems announced the addition of the new SapphireBlu™ 3000 W Ku-Band Hubmount UltraLinear™ Modular SSPA/SSPB to its broad portfolio of solutions delivering high power density, high linear power and millions of dollars of savings.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits, is adding a new driver amplifier, the CMD192C5, to its growing product library. The CMD192C5 is the packaged version of the highly popular CMD192 amplifier that until now had only been available in die form.