The EDI CON 2014 technical sessions and workshops will feature numerous papers on the current state of Gallium Nitride (GaN) transistor technology, GaN-based RF power amplifiers and their design and use in various applications. GaN has emerged as the technology of choice for many new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare applications. This III-V semiconductor material is being quickly adopted for systems that will benefit from its high power density of about 5 to 12 W/mm, broadband characteristics (due to its high output impedance) and its ability to dissipate heat from a small package. Furthermore, GaN has high breakdown voltages levels and features typical transistor fTs up to 200 GHz, allowing these HEMT (high electron mobility transistors) to amplify signals well into the upper-gigahertz ranges. The presentations will be complemented by the participation of GaN device manufacturers such as RFHIC, NXP, DYNAX, Freescale and others in the event’s vendor exhibition.
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Thales Alenia Space has announced that the French-Italian dual broadband telecommunications Access on Theatres for European allied forces Nations-French Italian Dual Use Satellite (Athena-Fidus) satellite will be launched shortly by Arianespace.
Jackson Labs Technologies Inc. announced the availability of its breakthrough product DROR-II, a 10MHz/5MHz/1PPS GPS-Disciplined Atomic Frequency and Timing Reference (GPSDO).