Rugged Transistor Delivers 150 W for ISM

RFMW announced design and sales support for a high-power transistor from Ampleon. The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. Offering up to 31 dB of gain and typical drain efficiency of > 72 percent, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 V VDS while the ART150FEU is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 V. Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor. Advanced Rugged Technology is capable of withstanding load mismatches corresponding to a VSWR of 65:1. Additional uses are found in radio and VHF TV broadcast transmitters as well as HF communications and radar systems.