Microwave Journal
www.microwavejournal.com/articles/37280-a-survey-of-substrate-integrated-waveguide-bandpass-filter-development

Online Spotlight: A Survey of Substrate Integrated Waveguide Bandpass Filter Development

December 12, 2021

Substrate integrated waveguide (SIW) is a bridge between planar and non-planar transmission lines. It inherits the merits of both metallic waveguides and planar structures. Non-planar rectangular or circular waveguide can handle high power and provide high selectivity but weighs more and is relatively expensive, where planar transmission line is light weight and producible using low-cost mass production techniques. It cannot, however, withstand high power and generally has higher losses. SIW filters, such as cross coupled filters, defected ground structure (DGS) based filters, metamaterial-based filters, tunable filters and filters on new materials are reviewed along with bandwidth enhancement, size reduction and selectivity improvement.

The electromagnetic spectrum is heavily crowded with wireless signal frequencies. Microwave and mmWave filters are in high demand to enable the reception of desired signals or reject unwanted ones. Bandpass filters are the most popular type for most common applications such as communication systems. They are also the most challenging to design and construct.

An RF filter designer must balance conflicting requirements. For example, achieving high selectivity demands more resonators; but this results in increased insertion loss, which is proportional to the number of resonators. The design parameters of a filter include insertion loss, return loss, group delay, unloaded quality factor, loaded quality factor, external quality factor, cost and skirt selectivity. An RF engineer must balance performance parameters to develop an optimum filter, however, the biggest tradeoff is between performance requirements and cost.

The loss mechanism is another important consideration. Along with the physical and electrical parameters, it depends on the filter’s resonant mode behavior. A particular resonance behavior is associated with the electric and magnetic field distribution of that mode, which in turn is related to the loss mechanism. A resonator can support numerous resonant modes. The excitation mechanism, filter structure and resonant frequency determine the number of modes. Multimode resonators play an important role in determining filter size and insertion loss.

The development of a filter depends on the selection of a suitable transmission line or waveguide technology. A planar microstrip filter weighs less than a waveguide filter, but its quality factor is poor. A non-planar rectangular waveguide filter has an excellent quality factor and handles greater power but is heavier and occupies a larger volume. A fusion of these two technologies by K. Wu in 2001 led to the development of substrate integrated waveguide technology.¹ SIW is popular due to its high quality factor, high-power handling capability, low-cost and low loss.

SIW CONCEPT

SIW is a planar waveguide that can be fabricated using printed circuit board or low temperature cofired ceramic (LTCC) technologies. It is constructed by inserting two rows of metallic via posts into a dielectric substrate with a top and bottom metal lining (see Figure 1).1

Figure 1

Figure 1 SIW configuration.2

The SIW structure supports only the transverse electric mode of propagation.2 The propagation characteristics of the SIW TEn0 mode is like that of the rectangular waveguide TEn0 mode. Absence of a transverse magnetic mode makes SIW an appropriate choice for the design of bandpass filters. The characteristics of SIW are thoroughly discussed by Xu and Wu,2 and by Deslandes and Wu.3 A review of SIW is provided by Kumar and Raghavan.4

The frequency zone of interest for the TE10 mode is3

where k0 is the wave number in free space.

Equation (1) states that the period length, p, should be larger than the via diameter, d. Equation (2) must be satisfied to avoid band gap effect. Equation (3) ensures that leakage losses can be neglected. For mechanical rigidity, Equation (4) must be satisfied. Figure 2 shows the zone of interest for SIW in the plane of p/λc and d/λc.

Figure 2

Figure 2 Zone of interest for SIW.3

Rectangular waveguide and SIW parameters are related by5

where w is the SIW actual width, weff is its effective width, d is the diameter of the post and p is the pitch.

A more accurate relationship is given by2

The method of lines provides another empirical relationship6

where

Soundarya and Gunavathi analyzed SIW impedance and phase constants.7

SIW TRANSITIONS

Attention must be paid to interconnecting SIW with other planar circuits. The proper excitation of SIW components depends on the quality of these interconnections, or transitions. The basic interconnection of microstrip to SIW is tapering.8,9 Good return loss can be achieved using this type of transition (see Figure 3).

Figure 3

Figure 3 Microstrip to SIW transition.8

Yang et al.10 described an open-circuited transition between a microstrip line and SIW on an LTCC substrate in which energy was transferred to the waveguide through a via probe from the microstrip line. Abdolhamidi et al.11 developed a single-layer DC-decoupled SIW-to-microstrip transition using an interdigital configuration. Instead of a taper, an exponential transition from microstrip to SIW was developed by Sotoodeh et al.12 Transitions from SIW to other transmission lines such as co-axial lines and coplanar waveguide were summarized by Mallick et al.13 Another multi layered transition from SIW to Empty SIW (ESIW) was also proposed.14 Kordiboroujeni and Bornemann15 described a microstrip to SIW transition where two additional vias were implemented in the regular taper to provide excellent results. A new design formula was also proposed by the authors.

SIW RESONATOR

SIW has been used for the design of filters from Gigahetrz to Terahertz. The essential structure of any filter is the resonator. The unloaded quality factor (Qu) depends on the selection of transmission line technology.16 Figure 4 visualizes the relationship between insertion loss, volume and cost of various RF resonators.

Figure 4

Figure 4 Comparative loss, size and cost of various resonators.16,17

For a given resonator, different excitations may lead to different modes, which provide different unloaded quality factors. Figure 5 shows different SIW cavity resonator excitation techniques. Center coupling provides the highest Qu.

Figure 5

Figure 5 Different SIW resonator coupling methods.18

Qu can be obtained from the S-parameters by19,20

where S21 is the transmission coefficient and Ql is loaded quality factor, which is given as

where f0 is the center frequency and f3dB is the 3 dB bandwidth of the filter.

Different classes of SIW filters and their transitions were summarized by Bozzi et al.21 In 2003, D. Deslandes and Ke Wu developed the first SIW filter by integrating planar circuits and waveguide filters.22 A PI network modeled the inductive posts. Post dimeters were calculated with theory proposed by Marcuvitz.23 The PI network was converted into an equivalent K inverter.24 Direct coupled waveguide resonators are compatible with this SIW technique.25-36 This design exhibits a standard Chebyshev response.

SIW CROSS COUPLED FILTERS

An overview of cross coupling was summarized by J.B.Thomas.37 High filter selectivity depends on the location of the finite transmission zeros (FTZs). One way of producing FTZs is to use the cross coupling concept which provides multiple paths for the signal to flow. Whenever two different signal paths have same magnitude but opposite phase, they cancel each other and an FTZ is generated on the imaginary axis of the complex frequency plane. Chen and Wu38 developed a cross coupled filter with stronger negative coupling between resonators 1 and 4 as shown in Figure 6. Positive coupling exists between resonators 1 and 2,2 and 3 and 3 and 4. Magnetic post wall irises provided positive coupling; and, a structure made up of a magnetic coupling iris and a microstrip line with a pair of metallized via-holes provided negative coupling. They developed two K-Band cross coupled SIW bandpass filters, without and with source-load coupling, having a center frequency of 20.5 GHz and respective bandwidths of 700 and 800 MHz.

Figure 6a
Figure 6b
Figure 6c

Figure 6 K-Band SIW cross coupled filter without source-load coupling: geometric configuration (a), topology (b) and filter response (c).37

Chen and Wu39 demonstrated a Ka-Band asymmetric response bandpass filter. They used a higher order resonant mode (TE102) to attain negative coupling. The filter had a center frequency of 35 GHz with a 1.3 GHz bandwidth. Conductor backed coplanar waveguide (CBCPW) was used to excite the filter.

Compared to the conventional Chebyshev response, quasi elliptic and elliptic filters have sharp skirt selectivity. Chen et al.40 exploited this property.

An SIW transverse bandpass filter with a mutated doublet was proposed by Li et al.41 It contained two resonators not directly coupled to each other; instead, the source and load were coupled directly to produce two transmission zeros resulting in high skirt selectivity.

SIW FILTERS WITH DGS

Any geometrical slot implanted in the ground plane is called a DGS.42,43 It can be either a unit cell or periodic (see Figure 7).

Figure 7a
Figure 7b
Figure 7c

Figure 7 Unit cell – Dumbbell DGS (a), horizontally periodic DGS (b) and vertically periodic DGS (c).43

The DGS is included in the ground extension along transmission line (microstrip, coplanar waveguide or CBCPW).44-48 The defects on the ground plane disturb the current distribution of the ground plane; which, in turn, affects the current distribution on the transmission line. This is because the ground plane defect changes the effective capacitance and inductance of the transmission line. A photonic band gap occupies a larger area, where the DGS is compact. It is also easy to design and fabricate. Various other DGS shapes are shown in Figure 8. These configurations offer higher slow wave factors, larger external quality factors and a wider stop bands with deeper rejection.

Figure 8

Figure 8 Different DGS configurations: spiral head (a), arrow head slot (b), “H” shape slots (c), square open loop with a slot in middle section (d), open loop dumbbell (e) and inter digital (f).42



Huang et al. used a DGS in a SIW bandpass filter for improved stopband performance.49 Wei et al.50 described an ultrawide band bandpass filter with a DGS comprising a pair of cascaded interdigital hairpin resonators and a semicircular DGS pair (see Figure 9). The cutoff frequency depends on the radius, R1. R1 and cutoff frequency are inversely proportional. By tuning R1 and the gap, W1, the passband of the filter is widened along with wide upper stop band.

Figure 9a Figure 9b

Figure 9 UWB BPF Configuration (a) and its frequency response (b).50

Since all DGSs are etched in the bottom plane, they are not easy to integrate with other components. Hence, some are etched in the transmission line planes of coplanar waveguide and substrate integrated waveguide.51-53 Huang et al.54 developed a SIW BPF using a novel DGS for X-Band applications. They designed three cascaded SIW-DGS cells with the DGSs etched on the top plane. Two CPW-SIW transitions were used for the input /output ports (see Figure 10). The filter had a center frequency of 9 GHz with a fractional bandwidth of 32 percent and insertion loss of about 0.81 dB. It found application in broadband communications.

Figure 10a Figure 10b

Figure 10 Three stage cascaded SIW-DGS filter top layer (a) and its filter response (b).54

To reduce SIW filter size, various techniques such as folded SIW filters,55-58 combline SIW filters,59,60 slow wave techniques61 and half mode SIW (HMSIW)62-64 have been used. HMSIW has been used in a number of applications.64-66

Huang et al.67 used a novel HMSIW DGS cell and its embedded form to develop a three-pole cascaded bandpass filter (see Figure 11). Half mode SIW reduced the filter size. The DGS was embedded in the top of the HMSIW. Tuning was achieved by adjusting the spacing between the DGS’s. The filter had a center frequency of 8.8 GHz, a frequency bandwidth (FBW) of 29 percent and insertion loss of 0.91 to 1.14 dB. The overall size was about 27 x 7.5 mm2, which was very compact compared with its conventional counterpart.

Figure 11a Figure 11b

Figure 11 HMSIW DGS filter configuration (a) and its scattering parameters (b).67

SIW FILTERS LOADED WITH METAMATERIALS

Based on the split ring resonator, the complementary split ring resonator (CSRR) was developed in 2004.68 Its characteristics are described by Dong et al.69 An interesting way to reduce the size of a SIW filter is to load a CSRR with the SIW structure.69-73 Many researchers exploited this approach to develop reduced size passive components.74-76 Gao et al.77 combined a complementary spiral resonator (CSR) along with CSRR in SIW to develop a dual band filter (see Figure 12).

Figure 12a Figure 12b

Figure 12 Configuration of a dual band SIW filter (a) and its filter response (b).77

In this structure the CSRR produces the first passband and CSRs produce the second passband. Embedding CSRs along with the CSRR not only made the structure compact but it led to an increase in resonant strength, resulting in a positive interaction. The dual band filter was 17 x 18 mm2 with center frequencies of 4.32 GHz and 5.52 GHz and fractional bandwidths of 5.76 and 4.98 percent, respectively. Yin and Lin77 modified a dual CSRR with a Z-shaped slot loaded on the SIW structure to produce dual pass bands (see Figure 13). The Z-shaped slot enhanced coupling, broadening the passband and improving flatness. The first band had a 1.94 GHz center frequency and a bandwidth of 0.28 GHz. The second band had a 4.85 GHz center frequency and a bandwidth of 0.13 GHz.

Figure 13a Figure 13b

Figure 13 Filter configuration (a) and frequency response (b).78

Fractals are magnetic dipoles that support backward wave propagation.79,80 Hamzah et al.81 described a three iteration H shaped fractal slot SIW bandpass filter for C-Band applications (see Figure 14). A fractal is defined as a group of scaled replicas of the basic form. The space filling property of fractal can be utilized for miniaturization of microwave components. By tuning the fractal slots, out-of-band rejection is improved. The authors developed one stage, three stage and five stage H shaped fractal SIW BPFs with low insertion loss, high selectivity and small size.

Figure 14a Figure 14b Figure 14c

Figure 14 H shaped fractal curve generation (a), one stage H shaped fractal SIW BPF (b) and frequency response (c).81

A fractal open complementary split ring resonator (FOCSRR) was used to design a SIW bandpass filter that operates on the principle of evanescent modes.82 Because the electrical size of the FOCSRR is larger, this results in miniaturization of the SIW bandpass filter. A size reduction of about 75.5 percent was achieved compared with the SIW-OCSRR filter.

Zhang et al.83 designed a SIW filter with a pair of reversely arranged square CSRRs implanted. It had an insertion loss of about 3.5 dB and a FBW of 5.5 percent at 5.15 GHz.

A compact filter using OCSRR and an open stub obtained higher rejection by making the inner ring thickness much greater than that of the outer ring.84

Kumar and Karthikeyan85 used sub-wavelength resonators (OCSRRs) along with two open λg/4 stubs. As the gap between the two split rings increased, coupling capacitance decreased, which in turn increased the resonant frequency of the filter and resulted in good passband characteristics.

TUNABLE SIW FILTERS

Tunable filters play an important role in radio and radar systems to eliminate interference and enhance dynamic range. Microstrip and coplanar waveguide filters with reconfigurable capability have been developed, but with poor quality factors.86-88 SIW reconfigurable filters are attractive alternatives due to their high quality factors and low loss. Tuning was first proposed by inserting vertical capacitive posts, within the SIW cavities.89 Sekar et al.90 designed a novel reconfigurable SIW filter using P-I-N diode elements on a three layer RT Duroid substrate (see Figure 15) for a 25 percent tuning bandwidth. RF MEMS could also be used as switching elements.

Figure 15

Figure 15 SIW filter top view.90

Using a combline resonator,91 a tunable combline SIW cavity loaded with a GaAs varactor was proposed by Sirci et al.92 A two pole tuning filter was also demonstrated.93

Iqbal et al.94 developed two higher order SIW filters by connecting two cavities perpendicular and parallel through the coupling slots. Varactor diodes were used for tuning.

SIW COMPONENTS AND NEW MATERIALS

SIW filters are finding new applications in wearable systems.95,96 SIW circuits have been constructed on paper substrates.97-99 Moro et al.98 used an inkjet printer to deposit silver for SIW top and bottom layers. Another approach used aluminum foils to produce the top and bottom sides of the SIW structure with vias realized using conductive paste (see Figure 16).99

Figure 16a Figure 16b

Figure 16 Quarter mode SIW filter (a) and its response (b).99

Moro et al.96 designed, developed and tested a new variety of SIW components on textile fabrics. They designed a folded textile SIW filter operating at 2.45 GHz and a folded SIW cavity backed patch antenna. Wearable electronic goods are becoming more popular.100 SIW structures on the basis of 3D printing have been exploited in the past few years.101-103 Moscato et al.104 employed fused deposition modeling where different material densities from 10 to 100 percent can be printed to control dielectric permittivity and loss tangent.

CONCLUSIONS

Recent developments in the microwave and mmWave filters based on SIW technology reported in the available literature highlights tuning mechanisms, design issues and the integration of SIW components with other transmission line technologies such as microstrip and CPW. SIW filters exhibit many features that can be useful in modern communication system design.

ACKNOWLEDGMENTS

The authors would like to thank the Council of Scientific & Industrial Research, India, a premier national R & D organization for providing financial support for this work.



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