High Linearity pHEMT for Commercial and Military Applications

RFMW announced availability of discrete devices from Microwave Technology (MwT). The MwT-PH8F AlGaAs/InGaAs pHEMT delivers 30 dBm Psat at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power up to 18 GHz. Small signal gain is 11 dB. Offered in a 670 x 315 micron chip, the MwT-PH8F can be used in military and hi-rel SWaP designs with MTBF values better than 1 x 108 hours at 150°C channel temperature.