Microwave Journal
www.microwavejournal.com/articles/28401-w-pulsed-rf-power-transistor-blf189xrb
1900W Power Transistor

1900 W Pulsed RF Power Transistor: BLF189XRB

May 9, 2017

RFMW Ltd. announces design and sales support for a 1900 W pulsed RF power transistor from Ampleon. The BLF189XRB supports industrial applications in the 30 to 150 MHz frequency range such as magnetic resonance imaging (MRI). Offering gain of 23 dB, efficiency is 63%.

Excellent ruggedness is a hall mark of Ampleon high power LDMOS and the BLF189XRB can withstand VSWR mismatch as high as 65:1. Excellent thermal stability is enhanced by the flanged, balanced ceramic packaging.

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