LDMOS Power Transistor: BLF10M6200

RFMW Ltd. announces design and sales support forAmpleon’s BLF10M6200, a 200 W LDMOS power transistor targeted for ISM applications from 700 to 1000 MHz.

The BLF10M6200 offers 28.5% typical drain efficiency and is internally matched for ease of use. Ampleon designers integrate internal ESD protection for enhanced reliability.

The BLF10M6200 is designed for ruggedness in class-AB operation and capable of withstanding a load mismatch of 10:1 through all phases. With 20 dB of gain, this Ampleon transistor draws 1400 mA of current from a 28 V supply.