Integra Technologies Inc.

Company Profile

Contact Information:


Title: Director of Business Development
Phone: (310) 606-0855

Location:


Integra Technologies Inc.
321 Coral Circle
El Segundo CA 90245
United States
Handling-and-Adjustment-of-Integra-Technologies Gan-on-SiC-HEMT-Evaluation-Kits (1) (1)

GaN-on-SiC HEMT Transistor Evaluation Kits

Integra Technologies offers GaN-on-SiC HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice.

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IFF Avionics Transistor: IGN1011L120

Integra Technologies is now offering an IFF avionics transistor with 120 W peak output power using GaN/SiC technology. The IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation.

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GaN/SiC RF Power Modules

Integra Technologies is pleased to announce the formal launch of ultra-efficient RF Power Modules developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.

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IGT5259CW25

Fully-Matched GaN/SiC RF Power Transistor

IGT5259CW25 is a RF power transistor, ideal for C-band, CW applications. Fully matched to 50-ohms, operating at the instantaneous frequency range of 5.2 to 5.9 GHz, and offers a minimum of 25 W of output power at 36 V drain bias.

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IGT3135M135

GaN HEMT Transistor: IGT3135M135

IGT3135M135, a 50-Ohm matched high-power GaN HEMT transistor, that operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power.

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Pulsed Power Pallet Amplifier: IGNP1214M1KW-GPS

IGNP1214M1KW-GPS is a single-supply 50-Ohm matched GaN-based pulsed power pallet amplifier for L-Band radar systems, operating in the 1.20 to 1.40 GHz instantaneous frequency band. The pallet amplifier supplies a minimum of 1000 W of peak pulsed output power. 

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50W GaNSiC transistor final PR

GaN-on-SiC HEMT Transistor: IGT5259L50

IGT5259L50 is a high-power GaN-on-SiC HEMT transistor that is fully-matched to 50-Ohms and supplies 50 W of peak pulsed output power at 50 V drain bias. This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response.

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Pulsed Pallet Amplifier For L- Band: IGNP0912L1KW

IGNP0912L1KW is a 50-Ohm matched GaN-based high power pulsed pallet amplifier for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 to 1.215 GHz. This pallet amplifier supplies a minimum of 1000W of peak pulse power.

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Implications of Using kW-level GaN Transistors in Radar and Avionic Systems

This paper examines the effect of using normal Class A/B bias for kW-level GaN and LDMOS transistors used in radar and avionic systems.

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2018 RF Power Transistors and RF Power Modules Selection Guide

Offering unique expertise in optimizing standard and custom RF Power solutions for radar.

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Zero-in on the Best RF Transistor Technology for Your Radar’s High Power Amplifier Designs

The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, and weather-radar applications, start with the right choice of discrete or integrated RF power transistors. This Tech Brief is to explain the key things to look for, and the advantages and disadvantages of each technology.

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