TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.
“TriQuint continues to address our customers’ next generation requirements by delivering innovative high performance RF solutions. Products span from new industry-leading optical modulator drivers, to a new family of Small Cell amplifiers, to Spatium PAs that replace TWTAs, and our ever-growing portfolio of GaN based products and processes. TriQuint innovation is shaping the future for system performance and cost reductions,” remarked James L. Klein, Vice President and General Manager for Infrastructure and Defense Products.
See TriQuint’s new GaN products, processes and service solutions, Small Cell PA innovation, industry-leading optical drivers and Spatium™, TriQuint’s TWTA replacement technology, all during European Microwave Week at the Nuremburg Convention Center (October 8-10); Stand 130/141. Contact TriQuint to arrange a meeting at EuMW.
New GaN Solutions
TriQuint is announcing two new high-power GaN packaged transistors including the 200 Watt T1G4020036-FS/FL and the 285 Watt T1G2028536-FS/FL. Both devices offer excellent gain, which enables smaller RF amplifiers and reduced part-counts in many applications; both devices are widely exportable. The T1G2028536-FS/FL covers DC-2 GHz while the T1G4020036-FS/FL covers DC-3.3 GHz; both devices are ideal for commercial and defense applications including professional communications, commercial and defense radars, avionics and RF test systems.
TriQuint’s new GaN transistors are joined by new GaN amplifiers and low-noise amplifiers that also deliver high efficiency and improved performance compared to competing products for wide-ranging commercial and defense applications. New GaN products include wideband LNAs covering 2-6 and 6-12 GHz with excellent gain. New amplifiers include a family of solutions that focus on the needs of S-band radar and other key frequencies with excellent gain and efficiency.
Small-Cell Innovation
TriQuint is introducing the first in a new family of ‘small cell’ integrated power amplifiersthat also serve active antenna base stations. The new TGA2450-SM amplifier dramatically reduces board space while delivering high efficiency as a key component in 3G/4G mobile networks including LTE. The TGA2450-SM is sampling and now available; it meets Band 1 requirements while reducing PCB areas 50%. TriQuint has integrated amplifier solutions in development for additional global cellular bands. Contact TriQuintfor details and sample information.
Industry-Leading SMT Optical Solutions
TriQuint also recently added four new SMT optical network modulator driversto its industry-leading portfolio. These products expand the company’s line-up with devices that include miniaturized and integrated modules. TriQuint high performance optical components reduce overall system costs, simplify RF design and shrink board space for today’s 100 Gb/s optical fiber networks and future 200/400G systems. Contact TriQuintfor details and sample information.
Spatium Replaces TWTAs
TriQuint acquired CAP Wireless and its Spatium™RF power combining technology that replaces traveling wave tube amplifiers (TWTAs) in communications and defense systems. This technology leverages TriQuint’s position as a gallium nitride (GaN) pioneer and expands its expertise in high power RF solid-state amplifier systems. Spatium technology adds to the exceptional efficiency, bandwidth and ruggedness of TriQuint’s product portfolio. In high power RF applications, Spatium delivers superior broadband RF power efficiency through the use of patented coaxial spatial combining techniques. Spatium provides other performance advantages including solid-state reliability, smaller form factors, higher power densities and reduced weight compared to either TWTA-based systems or conventional planar power combining products. Contact TriQuintfor Spatium product details.
GaN LNAs
Part |
Frequency Range (Ghz) |
P1dB / |
Gain |
NF |
Voltage / Current |
Package |
TGA2611 |
2 - 6 |
25 |
25 |
1 |
10 / 100 |
Die |
TGA2612 |
6 - 12 |
25 |
25 |
1.5 |
10 / 100 |
Die |
GaN Transistors
Part Number |
Description |
Frequency (GHz) |
Psat (dBm) |
LS Gain (dB) |
PAE (%) |
Bias (V/mA) |
Package |
T1G4020036-FS/FL |
200W Pkg. Transistor |
DC-3.3 |
56 |
13 |
50 |
36 / 720 |
Cer. Flat Lead |
T1G2028536-FS/FL |
285 W Pkg. Transistor |
DC-2 |
54.2 |
16 |
54 |
36 / 576 |
Cer. Flat Lead |
GaN Amplifiers
Part Number |
Frequency (GHz) |
Psat (dBm) |
LS Gain (dB) |
PAE (%) |
Bias (V/mA) |
Package |
ECCN |
TGA2597 |
2-6 |
33 |
23 |
30 |
25 / 170 |
Die |
EAR99 |
TGA2583 |
2.7-3.8 |
41 |
25 |
52 |
28 / 175 |
Die |
3A001.b.2.a |
TGA2585 |
2.7-3.8 |
42.5 |
24.5 |
52 |
28 / 225 |
Die |
3A001.b.2.a |
TGA2814 |
3-3.5 |
49 |
22 |
55 |
28 / 125 |
Die |
|
TGA2813 |
3-3.5 |
50 |
22 |
55 |
28 / 150 |
Die |
|
TGA2312-FL |
9-10 |
48 |
10 |
35 |
24 / 2400 |
Flange |
3A001.b.3.b |
Small Cell Integrated PA
Part Number |
Description |
Frequency Range (GHz) |
Average Output Power (W) |
PAR / P3dB (dBm) / (W) |
Gain (dB) |
Vcc / PAE |
Linearity (dBc) |
Package Style |
TGA2450-SM |
PA Module with Integrated Doherty |
2.11-2.17 |
2.5 |
7.5-8 / 18 |
35 |
18 & 5 / 35% |
-55 ACLR |
SMP |
Optical Modulator Drivers
Part Number |
Description |
Frequency (GHz) |
Vpp |
Gain (dB) |
3dB BW |
+V |
IQ (mA) |
28 Gb/s 6 Vpp Differential Driver; 6x6mm2
|
DC-28 |
4-8 |
22 |
25 |
4-5 |
450 |
|
CFP2 / CFP4 Pkg'd Driver; 4x3mm2 |
DC-32 |
1.5 |
10 |
28 |
3.3 |
50 |
|
TGA4894-SL |
100 Gb/s Linear Dual Driver, 2 Internal Bias-T’s
|
DC-34 |
5-8 |
35 |
25 |
5-7 |
650 |
Optical Clock Driver with Integrated AGC |
11.3, 14.5 16.5 (11-17) |
27 dBm |
27 |
17 |
6 |
210 |
Sales web page for local assistance. Contact TriQuint for EuMW product details, to request samples, or to arrange a meeting during European Microwave Week.
Visit TriQuint during European Microwave Week October 8-10 at the Nuremburg Convention Center in Stand 130/141. Visit its